| PART |
Description |
Maker |
| S75NS128NDEZFWNK0 S75NS128NDEZFWNK3 S75NS128ND0ZFW |
1.8 Volt-only, Stacked Multi-Chip Product (MCP) x16 MirrorBit Flash Memory and DRAM
|
SPANSION[SPANSION]
|
| MB84VD23381HJ-70 MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Advanced Micro Devices
|
| MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc.
SPANSION LLC
|
| MB84VD23280EA-90 MB84VD23280EA-90-PBS MB84VD23280E |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| LRS1387 |
64M (X16) FLASH 8M (X16) SRAM
|
Sharp Electrionic Components
|
| K8S6415ETB-FC7C K8S6415ETB-DC7C K8S6415ETB K8S6415 |
64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的（x16）的快闪记忆2M的（x16）的移动FCRAMTM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
